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MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
600
V
Average Rectified Forward Current
(Rated VR, TC
= 159
°C)
IF(AV)
5.0
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
50
A
Operating Junction and Storage Temperature Range
TJ, Tstg
?65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance, Junction to Case
RJC
2.5
°C/W
Maximum Thermal Resistance, Junction to Ambient (Note 1)
RJA
49.5
°C/W
1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700 mm2
Cu area.
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 5.0 Amps, T
C
= 25
°C)
(IF
= 5.0 Amps, T
C
= 125
°C)
VF
2.7
1.65
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC
= 25
°C)
(Rated dc Voltage, TC
= 125
°C)
IR
10
70
A
Maximum Reverse Recovery Time
(IF
= 1.0 Amp, di/dt = 50 Amps/
s, VR
= 30 V, T
J
= 25
°C)
trr
30
ns
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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相关PDF资料
MURHS160T3G
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